MEMORY存储芯片MT29F2G08ABAGAWP-IT-G中文规格书
摘要:NANDFlashMemoryMT29F2G08AABWP/MT29F2G16AABWPMT29F4G08BABWP/MT29F4G16BABWPMT29F8G08FABWPFeatures•Organization:•Pagesize:x8:2,112bytes(2,048+64bytes)x16:1,056words(1,024+32words)•Blocksize:64pages(128K+4Kbytes)•Devicesize:2Gb:2,048blocks;4Gb:4,096blocks;8Gb:8,192blocks•Readperformance:•Randomread:25µs•Sequentialread:30ns(3Vx8only)•Writeperformance:•Pageprogram:300µs(TYP)•Blockerase:2ms(TYP)•Endurance:100,000PROGRAM/ERASEcycles•Dataretention:10years•Firstblock(blockaddress00h)guaranteedtobevalidwithoutECC(upto1,000PROGRAM/ERASEcycles)•VCC:2.7V–3.6V•AutomatedPROGRAMandERASE•BasicNANDcommandset:•PAGEREAD,RANDOMDATAREAD,READID,READSTATUS,PROGRAMPAGE,RANDOMDATAINPUT,PROGRAMPAGECACHEMODE
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