MEMORY存储芯片MTFC8GACAANA-4M-IT中文规格书
摘要:ODTCharacteristicsTheODTeffectiveresistanceRTTisdefinedbyMR1[9,6,and2].ODTisappliedtotheDQ,DM,DQS,DQS#,andTDQS,TDQS#balls(x8devicesonly).TheODTtargetvaluesandafunctionalrepresentationarelistedinTable29andTable30(page51).Theindividualpull-upandpull-downresistors(RTT(PU)andRTT(PD))aredefinedasfollows:•RTT(PU)=(VDDQ-VOUT)/|IOUT|,undertheconditionthatRTT(PD)isturnedoff•RTT(PD)=(VOUT)/|IOUT|,undertheconditionthatRTT(PU)isturnedoffFigure19:ODTLevelsandI-VCharacteristicsChipinterminationmodeODTVDDQIPUIOUT=IPD-IPURTT(PU)ToothercircuitrysuchasRCV,...DQIOUTRTT(PD)VOUTIPDVSSQTable29:On-DieTerminationDCElectricalCharacteristicsParameter/ConditionSymbolRTTeffectiveimpedanceRTT(EFF)ΔVMDeviatio
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