MEMORY存储芯片M45PE16-VMW6TG中文规格书
摘要:PAGEWRITEThePAGEWRITEcommandallowsbytesinthememorytobeprogrammed.BeforeaPAGEWRITEcommandcanbeaccepted,aWRITEENABLEcommandmustbeexecuted.AftertheWRITEENABLEcommandhasbeendecoded,thedevicesetsthewriteenablelatch(WEL)bit.ThePAGEWRITEcommandisenteredbydrivingchipselect(S#)LOW,followedbythecommandcode,3addressbytes,andatleast1databyteonaserialdatainput(DQ0).TheresetofthepageremainsunchangedifnopowerfailureoccursduringthisWRITEcycle.ThePAGEWRITEcommandperformsaPAGEERASEcycleevenifonly1byteisupdated.Iftheeightleast-significantaddressbitsA[7:0]arenotall0,alltransmitteddatathatgoesbeyondtheendofthecurrentpageisprogrammedfromthestartaddressofthesamepage;thatis,fromtheaddresswhoseeightleast
温馨提示:当前文档最多只能预览
5 页,若文档总页数超出了
5 页,请下载原文档以浏览全部内容。
本文档由 匿名用户 于 2021-02-20 01:04:13上传分享