MEMORY存储芯片M25PE16-VMW6TG中文规格书
摘要:512Kbitto32Mbit,LowVoltage,SerialFlashMemoryWith40MHzor50MHzSPIBusInterfaceDATABRIEFFEATURESSUMMARY■■■■■■■■■■■512Kbitto32MbitofFlashMemoryPageProgram(upto256Bytes)in1.4ms(typical)SectorErase(256Kbitor512Kbit)BulkErase(512Kbitto32Mbit)2.7to3.6VSingleSupplyVoltageSPIBusCompatibleSerialInterface40MHzto50MHzClockRate(maximum)DeepPower-downMode1µA(typical)ElectronicSignatures–JEDECStandardTwo-ByteSignature(20xxh)–RESInstruction,One-Byte,Signature,forbackwardcompatibilityMorethan100000Erase/ProgramCyclesperSectorMorethan20YearDataRetentionFigure1.PackagesVDFPN8(ME)8x6mm(MLP8)VDFPN8(MP)(MLP8)Table1.ProductListReferencePartNumberM25P32M25P16M25P80M25PxxSO16(MF)300milwidthM25P40M25P20M25P
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