MEMORY存储芯片MT18KDF1G72AZ-1G6P1中文规格书
摘要:1.35VDDR3LSDRAMVLPUDIMMMT18KDF51272AZ–4GBMT18KDF1G72AZ–8GBFeaturesFigure1:240-PinVLPUDIMM(MO-269R/CK)Moduleheight:18.75mm(0.738in)•DDR3Lfunctionalityandoperationssupportedasdefinedinthecomponentdatasheet•240-pin,verylowprofile,unbuffereddualin-linememorymodule(VLPUDIMM)•Fastdatatransferrates:PC3-14900,PC3-12800,orPC3-10600•4GB(512Megx72),8GB(1Gigx72)•VDD=1.35V(1.235–1.45V)•VDD=1.5V(1.425–1.575V)•BackwardcompatibletoVDD=1.5V±0.075V•VDDSPD=3.0–3.6V•SupportsECCerrordetectionandcorrection•Nominalanddynamicon-dietermination(ODT)fordata,strobe,andmasksignals•Dual-rank•OnboardI2Ctemperaturesensorwithintegratedserialpresence-detect(SPD)EEPROM•8internaldevicebanks•Fixedburstchop(BC)of4and
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